Precursor Parameter Identification for IGBT Prognostics

Shared by Miryam Strautkalns on Apr 10, 2013

Summary

Author(s) :
N. Patil, J. Celaya, D. Das, K. Goebel, M. Pecht
Abstract

Precursor parameters have been identified to enable development of a prognostic approach for insulated gate bipolar transistors (IGBT). The IGBT were subjected to thermal over- stress tests using a transistor test board until device latch-up. The collector-emitter current, transistor case temperature, transient and steady state gate voltages, and transient and steady state collector-emitter voltages were monitored in-situ during the test. Pre- and post-aging characterization tests were performed on the IGBT. The aged parts were observed to have shifts in capaci- tance-voltage (C-V) measurements as a result of trapped charge in the gate oxide. The collector-emitter ON voltage V ce(on) showed a reduction with aging. The reduction in the V ce(on) was found to be correlated to die attach degradation, as observed by scan- ning acoustic microscopy (SAM) analysis. The collector-emitter voltage, and transistor turn-off time were observed to be precursor parameters to latch-up. The monitoring of these precursor param- eters will enable the development of a prognostic methodology for IGBT failure. The prognostic methodology will involve trending precursor data, and using physics of failure models for prediction of the remaining useful life of these devices.

show more info
Publication Name
N/A
Publication Location
N/A
Year Published
N/A

Files

2009_IEEE_TREL_IGBT.pdf
1.8 MB 24 downloads

Discussions

Add New Comment