Effects of Lightning Injection on Power-MOSFETs

Shared by Miryam Strautkalns, updated on Jun 19, 2013


Author(s) :
J. Celaya, S. Saha, P. Wysocki, J. Ely, T. Nguyen, G. Szatkowski, S. Koppen, J. Mielnik, R. Vaughan, K. Goebel

Lightning induced damage is one of the major concerns in aircraft health monitoring. Such short-duration high voltages can cause significant damage to electronic devices. This paper presents a study on the effects of lightning injection on power metal-oxide semiconductor field effect transistors (MOSFETs). This approach consisted of pin- injecting lightning waveforms into the gate, drain and/or source of MOSFET devices while they were in the OFF-state. Analysis of the characteristic curves of the devices showed that for certain injection modes the devices can accumulate considerable damage rendering them inoperable. Early results demonstrate that a power MOSFET, even in its off-state, can incur considerable damage due to lightning pin injection, leading to significant deviation in its behavior and performance, and to possibly early device failures.

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