Jose Celaya Galvan

Member since: Oct 22, 2012, NASA Ames Research Center (SGT)

Precursor Parameter Identification for Insulated Gate Bipolar Transistor (IGBT) Prognostics

Shared by Jose Celaya Galvan, updated on Jan 16, 2014



Precursor parameters have been identified to enable development of a prognostic approach for insulated gate bipolar transistors (IGBT). The IGBT were subjected to thermal overstress tests using a transistor test board until device latch-up. The collector-emitter current, transistor case temperature, transient and steady state gate voltages, and transient and steady state collector-emitter voltages were monitored in-situ during the test. Pre- and post-aging characterization tests were performed on the IGBT. The aged parts were observed to have shifts in capaci- tance-voltage (C-V) measurements as a result of trapped charge in the gate oxide. The collector-emitter ON voltage V_CE(ON) showed a reduction with aging. The reduction in the V_CE(ON) was found to be correlated to die attach degradation, as observed by scan- ning acoustic microscopy (SAM) analysis. The collector-emitter voltage, and transistor turn-off time were observed to be precursor parameters to latch-up. The monitoring of these precursor parameters will enable the development of a prognostic methodology for IGBT failure. The prognostic methodology will involve trending precursor data, and using physics of failure models for prediction of the remaining useful life of these devices.

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